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(R)
MJD340 MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s s s
s
STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO MJE340 AND MJE350
3 1
DPAK TO-252 (Suffix "T4")
APPLICATIONS SOLENOID/RELAY DRIVERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER
s
DESCRIPTION The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM P tot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp = 25 o C) Total Power Dissipation at T case 25 o C Storage Temperature Max Operating Junction Temperature Value MJD340 MJD350 300 300 3 0.5 0.75 15 -65 to 150 150 V V V A A W
o o
Unit
C C
For PNP types voltage and current values are negative.
September 2003
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MJD340 / MJD350
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (v BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 300 V V EB = 3 V I C = 1 mA 300 Min. Typ. Max. 0.1 0.1 Unit mA mA V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) h FE DC Current Gain
I C = 50 mA
V CE = 10 V
30
240
Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP type voltage and current values are negative.
Safe Operating Area
Derating Curve
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MJD340 / MJD350
DC Current Gain (NPN type) DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
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MJD340 / MJD350
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.8 0.024 0
o
0.039 0o
P032P_B
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MJD340 / MJD350
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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